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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
September 2005
RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Features
30 dB small signal gain 30 dBm output power @ 1 dB compression 3% EVM at 22 dBm modulated power out 5.0 V positive collector supply operation Two power saving shutdown options (bias and logic control) Integrated power detector with 20 dB dynamic range RoHS compliant low profile 16 pin 3 x 3 x 0.9 mm leadless package Internally matched to 50 and DC blocked RF input/output
General Description
The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4-2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.
Optimized for use in 802.11b/g Access Point applications
Device
Electrical Characteristics1 802.11g OFDM Modulation
(with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage Gain Total Current @ 22dBm POUT EVM @ 22dBm POUT2 Detector Output @ 22dBm POUT Detector Threshold3
Notes: 1. VC1, VC2 = 5.0 Volts, VM12 = 3.3V, TA = 25C, PA is constantly biased, 50 system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold.
Min
2.4 4.5 2.8
Typ
5.0 3.3 30 195 3.0 960 4
Max
2.5 5.5 3.6
Units
GHz V V dB mA % mV dBm
(c)2005 Fairchild Semiconductor Corporation
1
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RMPA2455 Rev. F
RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Electrical Characteristics1 Single Tone
Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage Gain Total Quiescent Current Bias Current at pin VM122 P1dB Compression Standby Current3 Shutdown Current (VM12 = 0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold7
Min
2.4 4.5 2.8
Typ
5.0 3.3 30 140 17 30 0.7 <1.0 12 10 4 6 -40 -40
Max
2.5 5.5 3.6
Units
GHz V V dB mA mA dBm mA A dB dB V dBm dBc dBc
2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control (VL): Device Off, Logic High Input Device On, Logic Low Input Logic Current Turn-on Time4 Turn-off Time Spurious (Stability)5 2.0
2.4 0.0 150 <1 <1 -65 0.8
V V A S S dBc
Absolute Ratings6
Symbol
VC1, VC2 IC1, IC2 Supply Current IC1 IC2 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature
Parameter
Positive Supply Voltage
Ratings
6 120 700 4.0 5 10 -40 to +85 -55 to +150
Units
V mA mA V V dBm C C
VM12 VL PIN TCASE TSTG
Notes:
1. VC1,VC2 = 5.0V, VM12 = 3.3V, TC = 25C, 50 system. 2. Mirror bias current is included in the total quiescent current. 3. VL is set to Input Logic Level High for PA Off operation. 4. Measured from Device On signal turn on (Logic Low) to the point where RF POUT stabilizes to 0.5dB. 5. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 6. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values 7. POUT measured at PIN corresponding to power detection threshold.
2 RMPA2455 Rev. F
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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Functional Block Diagram
VDET
VM12
VC2
N/C
16
15
14
13
Pin
1 2
Description
VL (logic) RF IN RF IN N/C VC1 N/C N/C N/C N/C RF OUT RF OUT N/C VC2 VDET N/C VM12
VL
1
BIAS
VOLTAGE DETECTOR
12
N/C
3 4 5
RF IN
2
INPUT MATCH INT STG MATCH OUTPUT MATCH
11
RF OUT
6 7 8
RF IN
3
10
RF OUT
9 10
N/C
4
9
N/C
11 12 13 14
5
6
7
8
15
VC1
N/C
N/C
N/C
Backside Ground
16
3 RMPA2455 Rev. F
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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Performance Data 802.11g OFDM
Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Measured EVM Vs. Modulated Output Power VC1, VC2 = 5.0V, VM12 = 3.3V 6 5 4 2.4 GHz 3 2 1 0 0 2 4 6 8 10 12 14
Includes 0.8% System Level EVM
Total Current Vs. Modulated Output Power VC1, VC2 = 5.0V, VM12 = 3.3V 220 200 Total Current (mA) 180 160 140 120 100 0 2 4 6 8 10 12 14 16 18 20 22 24 Modulated Output Power
Total Measured EVM (%)
2.45 GHz 2.5 GHz
2.4 GHz 2.45 GHz 2.5 GHz
16
18
20
22
24
Modulated Output Power (dBm)
Gain Vs. Modulated Output Power VC1, VC2=5.0V, VM12=3.3V T=25C
31 30
Detector Voltage Vs. Modulated Output Power VC1, VC2 =5.0V, VM12=3.3V T=25C 3000 2500
28 Gain (dB) 27 26
Detector Voltage (mV)
29
2000 1500 1000 500
2.4 GHz 2.45 GHz 2.5 GHz
2.4 GHz
25 24 23 22 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
2.45 GHz 2.5 GHz
0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 Modulated Output Power (dBm)
Modulated Output Pow er (dBm )
Total Measured EVM Vs. Modulated Output Power VC1, VC2 = 4.5, 5.0 and 5.5V, VM12 = 3.3V F=2.45 GHz 6 5 5 Total Measured EVM (%) Total Measured EVM (%) 4.5 V 4 3 2 1
0.8% System Level EVM Included
Typical EVM Vs. Modulated Power Out VC1, VC2=5.0V, VM12 =2.8 to 3.3V F=2.45 GHz T=25C
VM=2.8V 4 VM=2.9V VM=3.0V 3 VM=3.1V VM=3.2V 2 VM=3.3V 5.0 V 5.5 V
1
Includes 0.8% System Level EVM
0 0 2 4 6 8 10 12 14 16 18 20 22 24
0 0 2 4 6 8 10 12 14 16 18 20 22 24
Modulated Output Power (dBm)
Modulated Output Power (dBm)
4 RMPA2455 Rev. F
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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Performance Data 802.11g OFDM
Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Bias Current Vs. Modulated Output Power VC1, VC2=5.0V, VM12 =2.8 to 3.3V F=2.45 GHz T=25C
300
VM=2.8V VM=3.0V VM=2.9V VM=3.1V
Modulated Gain and Total Quiescient Current Vs. Mirror Voltage (VM) 30 29 Modulated Gain (dB) 28 27 Current 26 25 24 23 80 60 40 20 2.8 2.9 3 3.1 3.2 3.3 Gain 160 140 120 100
200
VM=3.2V VM=3.3V
150
100
50
0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Modulated Output Power (dBm)
Mirror Voltage (Volts)
Single Tone
Gain Vs. Single Tone Output Power VC1, VC2 = 5.0V, VM12 = 3.3V 33 32 31 30 Gain (dB)
Sij (dB) 20 10 0
S22
S-Parameters VC=5.0V VM12=3.3V T=25C 40 30
S21
29 28 27 26 25 24 23 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 Single Tone Output Power (dBm) 2.4 GHz 2.45 GHz 2.5 GHz
-10 -20
S11
-30 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 Frequency (GHz)
5 RMPA2455 Rev. F
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Total Quiescent Current (mA)
250 Total Bias Current (mA)
RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Evaluation Board Schematic
Backside Ground
Package Outline
Dimensions in inches [mm]
Front Side View
2455 YWWX
See Detail A
Detail A Bottom View as Viewed from Bottom Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side.
6 RMPA2455 Rev. F
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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Evaluation Board of Materials
Evaluation Board Layout
C6
C3 R1 L1
C4 C2
L2 C1 C5 C7
Actual Board Size = 2.0" X 1.5"
7 RMPA2455 Rev. F
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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Evaluation Board Turn-On Sequence1
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND) pin on the board. 2) Apply low voltage 0.0 to +1.0 V to pin VL. 3) Apply positive supply voltage VC1 (= 5.0V) to pin VC1 (first stage collector). 4) Apply positive supply voltage VC2 (= 5.0V) to pin VC2 (second stage collector). 5) Apply positive bias voltage VM12 (= 3.3V) to pin VM12 (bias networks). 6) At this point, you should expect to observe the following positive currents flowing into the pins:
7) Apply input RF power to SMA connector pin RFIN. Currents in pins VC1 and VC2 will vary depending on the input drive level. 8) Vary positive voltage VL on pin VREG from +0.5V to +2.4V to shut down the amplifier or alter the power level. Shut down current flow into the pins:
Pin
VM12 VC1 VC2 VL
Current
<0.7 mA <1 nA <1 nA <0.25 mA
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
Pin
VM12 VC1 VC2 VL
Current
15.0 - 20.0 mA 45.0 - 65.0 mA 60.0 - 80.0 mA <1 nA
8 RMPA2455 Rev. F
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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within one year of removal from the dry pack. * During the one year period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the one year period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
260
Ramp-Up R ate 3 C/sec max
Peak tem p 260 +0/-5 C 10 - 20 sec
Temperature (C)
217 200
Time above li quidus temp 60 - 150 sec
150
Preheat, 150 to 200 C 60 - 180 sec
100
Ramp-Up R ate 3 C/sec max
50 25
Time 25 C/sec t o peak tem p 6 mi nutes max
Ramp-Do wn Rate 6 C/sec max
Time (Sec)
9 RMPA2455 Rev. F
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RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM 2 E CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM
DISCLAIMER
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SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
10 RMPA2455 Rev. F
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